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MRF21010LSR1

Part Number	MRF21010LSR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	May 10, 2018
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet	MRF21010LSR1 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.
096 MHz BW, 15 DTCH Output Power — 2.
1 Watts Power Gain — 13.
5 dB Efficiency — 21% • Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz, 10 Watts CW Output Power Features • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
• RoHS Compliant.
• In Tape and Reel.
R1 Suffix = 500 Units per 3...

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