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MRF21010LSR1

Part Number	MRF21010LSR1
Manufacturer	Motorola
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET ...
Datasheet	MRF21010LSR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.
096 MHz BW, 15 DTCH Output Power — 2.
1 Watts Power Gain — 13.
5 dB Efficiency — 21% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel.
R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc.
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CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 - 0.
5, +15 43.
75 0.
25 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C THERMAL CHARACTERISTICS Max 5.
5 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2003 For Mo...

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