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MMBT8099LT1G

ON Semiconductor
Part Number MMBT8099LT1G
Manufacturer ON Semiconductor
Description Amplifier Transistor
Published May 10, 2018
Detailed Description MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS C...
Datasheet PDF File MMBT8099LT1G PDF File

MMBT8099LT1G
MMBT8099LT1G

Overview
MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 80 80 6.
0 500 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.
8 Unit mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.
4 mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be a...


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