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MMBT8099LT1

ON
Part Number MMBT8099LT1
Manufacturer ON
Description Amplifier Transistor
Published May 9, 2005
Detailed Description MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collecto...
Datasheet PDF File MMBT8099LT1 PDF File

MMBT8099LT1
MMBT8099LT1


Overview
MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.
0 500 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3 http://onsemi.
com THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.
) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 1.
) Total Device Dissipation Alumina Substrate (Note 2.
) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 2.
) Junction and Storage Temperature Range Symbol PD Max 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W 3 mW mW/°C °C/W °C 1 2 SOT–23 CASE 318 STYLE 6 1.
FR–5 = 1.
0 X 0.
75 X 0.
062 in.
2.
Alumina = 0.
4 X 0.
3 X 0.
024 in.
99.
5% alumina.
MARKING DIAGRAM KB M KB = Specific Device Marking M = Date Code ORDERING INFORMATION Device MMBT8099LT1 Package SOT–23 Shipping 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001 1 January, 2001 – Rev.
0 Publication Order Number: MMBT8099LT1/D MMBT8099LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 3.
) (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.
0 Vdc, IC = 0) (VEB = 4.
0 Vdc, IC = 0) V(BR)CEO 80 V(BR)CBO 80 V(BR)EBO ICES ICBO – – IEBO – – 0.
1 – 0.
1 – µAdc 6.
0 – – – 0.
1 Vdc µAdc µAdc – Vdc Vdc ON CHARACTERISTICS (Note 3.
) DC Current Gain (IC = 1.
0 mAdc, VCE = 5.
0 Vdc) (IC = 10 mAdc, VCE = 5.
0 Vdc) (IC = 100 mAdc, VCE = 5.
0 Vdc) Collector–Emitter Saturation Voltage (IC...


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