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BFP136

Siemens Semiconductor Group
Part Number BFP136
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for ...
Datasheet PDF File BFP136 PDF File

BFP136
BFP136

Overview
BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.
5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 150 20 mW 1000 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 90 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 60 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 12 100 - V µA 100 nA 50 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V Semiconductor Group 2 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 4 5.
5 1.
7 0.
7 6.
8 - GHz pF 2.
5 dB 2 3.
3 - IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, f = 1 MHz Noise figure F IC = 30 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 2) Gma IC = 80 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.
8 GHz Transducer gain |S21e|2 9 3 dBm 33 15.
5 9.
5 - IC...


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