DatasheetsPDF.com

BFP620

Infineon Technologies AG
Part Number BFP620
Manufacturer Infineon Technologies AG
Description NPN Silicon Germanium RF Transistor
Published Mar 23, 2005
Detailed Description Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a ...
Datasheet PDF File BFP620 PDF File

BFP620
BFP620

Overview
Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineon's reliable high volume Silicon Germanium technology • Ideal for CDMA and WLAN applications • Collector design provides high linearity of 14.
5 dBm OP1dB for low voltage application • Maximum stable gain Gms = 21.
5 dB at 1.
8 GHz Gma = 11 dB at 6 GHz • Outstanding noise figure NFmin = 0.
7 dB at 1.
8 GHz Outstanding noise figure NFmin = 1.
3 dB at 6 GHz • Accurate SPICE GP model enables effective design in process • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available 3 4 BFP620 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620 Marking Pin Configuration R2s 1=B 2=E 3=C 4=E - - Package SOT343 1 2013-09-13 BFP620 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 95°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg Value 2.
3 2.
1 7.
5 7.
5 1.
2 80 3 185 150 -65 .
.
.
150 -65 .
.
.
150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 300 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 7.
5 V, VBE = 0 VCE = 5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.
5 V, IC = 0 DC current gain IC = 50 mA, VCE = 1.
5 V, pulse measured V(BR)CEO 2.
3 2.
8 -V ICES ICBO µA - - 10 - 0.
001 0.
04 - 1 40 nA IEBO - 10 900 hFE 110 180 270 - 1TS is measured on t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)