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BFP620F

Infineon Technologies AG
Part Number BFP620F
Manufacturer Infineon Technologies AG
Description NPN Silicon Germanium RF Transistor
Published Mar 23, 2005
Detailed Description Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Si...
Datasheet PDF File BFP620F PDF File

BFP620F
BFP620F

Overview
Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Outstanding noise figure NFmin = 0.
7 dB at 1.
8 GHz Outstanding noise figure NFmin = 1.
3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.
8 GHz Gma = 10 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.
4 x 0.
8 x 0.
59 mm) with visible leads • Qualification report according to AEC-Q101 available BFP620F 3 2 4 1 Top View 43 XYs 12 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620F Marking Pin Configuration R2s 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO TA = 25 °C TA = -55 °C Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC Base current Total power dissipati...


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