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RN2010

Part Number	RN2010
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	May 16, 2018
Detailed Description	RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, In...
Datasheet	RN2010 PDF File

Overview

RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1010, RN1011 Unit: mm Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC* Tj Tstg Rating −50 −50 −5 −100 400 150 −55~150 Unit V V V mA mW °C °C JEDEC TO−92 JEITA SC−43 TOSHIBA 2−5F1B Weight: 0.
21g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions...

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