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RN2002

Part Number	RN2002
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Epitaxial Type Transistor
Published	Apr 16, 2005
Detailed Description	RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Swi...
Datasheet	RN2002 PDF File

Overview

RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l l l l With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001~RN1006 Unit: mm Equivalent Circuit and Bias Resister Values Type No.
RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.
21g TO-92 SC-43 2-5F1B Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2001~2006 RN2001~2006 RN2001~2004 RN2005, 2006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 400 150 −55~150 Unit V V V mA mW °C °C 1 2001-06-07 RN2001~RN2006 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2001~2006 RN2001 RN2002 Emitter cut-off current RN2003 RN2004 RN2005 RN2006 RN2001 RN2002 DC current gain RN2003 RN2004 RN2005 RN2006 Collector-emitter saturation voltage RN2001~2006 RN2001 RN2002 Input voltage (ON) RN2003 RN2004 RN2005 RN2006 Input voltage (OFF) Transition frequency Collector Output capacitance RN2001~2004 RN2005, 2006 RN2001~2006 RN2001~2006 RN2001 RN2002 Input resistor RN2003 RN2004 RN2005 RN2006 RN2001~2004 Resistor ratio RN2005 RN2006 R1/R2 ― R1 ― VI (OFF) fT Cob ― ― ― VCE = −5V, IC = −0.
1mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0, f = 1MHz VI (ON) ― VCE = −0.
2V, IC = −5mA VCE (sat) ― IC = −5mA, IB = −0.
25mA hFE ― VCE = −5V, IC = −10mA IEBO ― VEB = −10V, IC = 0 Symbol ICBO ICEO Test Circuit ― Test Condition VCB = −50V, IE = 0 VCE = −50V, IB = 0 Min ― ― −0.
82 −0.
38 −0.
17 −0.
082 VEB = −5V, IC = 0 −0.
078 −0.
074 30 50 70 80 80 80 ― −1.
1 −1.
2 −1.
3 −1.
5 −0.
6 −0.
7 −1.
0 −0.
5 ― ― 3.
29 7 15.
4 32.
9 1.
54 3.
29 0.
9 Typ.
― ― ― ― ― ― ― ― ― ― ...

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