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BL10N60F

GME
Part Number BL10N60F
Manufacturer GME
Description N-Channel Power MOSFET
Published May 18, 2018
Detailed Description Silicon N-Channel Power MOSFET FEATURES  Fast Switching Pb  ESD Improved Capability Lead-free  ow Gate Charge (...
Datasheet PDF File BL10N60F PDF File

BL10N60F
BL10N60F

Overview
Silicon N-Channel Power MOSFET FEATURES  Fast Switching Pb  ESD Improved Capability Lead-free  ow Gate Charge (Typical Data:38nC)  Low Reverse transfer capacitances(Typical:15pF)  100% Single Pulse avalanche energy Test APPLICATIONS  Power switch circuit of adaptor and charger.
Production specification BL10N60F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source voltage VGS ID IDMa1 dv/dta3 Gate -Source voltage Continuous Drain current Continuous Drain current Tc=100°C Pulsed Drain current Peak Diode Recovery dv/dt PD Power Dissipation Value 600 ±30 10 6.
4 40 5.
0 50 VESD(G-S) Gate source ESD(HBM-C=100pF,R=1.
5kΩ) 4000 T...


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