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BL10N65

Part Number	BL10N65
Manufacturer	GME
Description	N-Channel Power Mosfet
Published	May 18, 2018
Detailed Description	Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Ca...
Datasheet	BL10N65 PDF File

Overview

Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Capability.
 100% AvalancheTtested.
 Gate Charge Minimized.
 Very Good Manufacturing Reliabilty.
Pb Lead-free APPLICATIONS  N-channel Enhancement mode Effect Transistor.
 Switching Applications.
TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate -Source Voltage ID Maximum Drain Current(continuous) at TC=25℃ TC=100℃ IDM Drain Current(pulsed)Note1 PD Power Dissipation at TC=25℃ Vesd(G-S) G-S ESD (HBM C=100pF,R=1.
5kΩ) Single Pulse Avalanche Energy EAS (sta...

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