DatasheetsPDF.com

BCP56-10

Infineon Technologies AG
Part Number BCP56-10
Manufacturer Infineon Technologies AG
Description NPN Silicon AF Transistors
Published Mar 23, 2005
Detailed Description BCP54...BCP56 NPN Silicon AF Transistors  For AF driver and output stages  High collector current  Low collector-emi...
Datasheet PDF File BCP56-10 PDF File

BCP56-10
BCP56-10


Overview
BCP54.
.
.
BCP56 NPN Silicon AF Transistors  For AF driver and output stages  High collector current  Low collector-emitter saturation voltage  Complementary types: BCP51 .
.
.
BCP53 (PNP) 4 3 2 1 VPS05163 Type BCP54 BCP54-10 BCP54-16 BCP55 BCP55-10 BCP55-16 BCP56 BCP56-10 BCP56-16 Marking BCP 54 1=B BCP 54-10 1 = B BCP 54-16 1 = B BCP 55 1=B BCP 55-10 1 = B BCP 55-16 1 = B BCP 56 1=B BCP 56-10 1 = B BCP 56-16 1 = B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 1 Nov-29-2001 BCP54.
.
.
BCP56 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE  1k Collector-base voltage Emitter-base voltage Symbol VCEO VCER VCBO VEBO BCP54 45 45 45 5 BCP55 60 60 60 5 BCP56 80 100 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.
5 100 200 1.
5 150 -65 .
.
.
150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP54.
.
.
BCP56 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ.
max.
Unit V 45 60 80 100 20 nA µA - BCP54 BCP55 BCP56 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO BCP54 BCP55 BCP56 45 60 100 V(BR)EBO ICBO ICBO hFE hFE Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V 5 25 BCP54.
.
.
56 hFE-grp.
10 hFE-grp.
16 40 63 100 hFE VCEsat VBE(ON) 100 160 - 250 160 250 0.
5 1 V DC current gain 1) ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)