DatasheetsPDF.com

BCR112T

Infineon Technologies AG
Part Number BCR112T
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR112... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR112T PDF File

BCR112T
BCR112T

Overview
BCR112.
.
.
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.
7kΩ, R2=4.
7kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type Marking Pin Configuration Package BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W WFs WFs WF WFs WFs WFs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR112.
.
.
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR112, TS ≤102°C BCR112F, TS ≤128°C BCR112L3, TS ≤135°C BCR112T, TS ≤109°C BCR112U, TS ≤118°C BCR112W, TS ≤124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 250 250 150 -65 .
.
.
150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Aug-29-2003 BCR112.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.
8 1 3.
2 0.
9 - 4.
7 1 140 3 100 1.
61 0.
3 1.
5 2.
5 6.
2 1.
1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)