DatasheetsPDF.com

BCR129S

Siemens Semiconductor Group
Part Number BCR129S
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver ...
Datasheet PDF File BCR129S PDF File

BCR129S
BCR129S

Overview
BCR 129S NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=10kΩ) Type BCR 129S Marking Ordering Code Pin Configuration WVs Q62702- Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 20 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Dec-18-1996 BCR 129S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 10 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA 120 630 V 0.
3 1 1.
1 13 kΩ VCB = 40 V, IE = 0 DC current gain hFE VCEsat Vi(off) 0.
4 IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.
5 IC = 2 mA, VCE = 0.
3 V Input resistor AC Characteristics Transition frequency R1 7 fT 150 3 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Dec-18-1996 BCR 129S DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 - 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 10 0 10 -1 -1 10 10 0 10 1 mA 10 -1 0.
0 0.
1 0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)