DatasheetsPDF.com

NCE2301E

NCE Power Semiconductor
Part Number NCE2301E
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E ...
Datasheet PDF File NCE2301E PDF File

NCE2301E
NCE2301E

Overview
http://www.
ncepower.
com Pb Free Product NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = -20V,ID =-2.
6A RDS(ON) < 150mΩ @ VGS=-2.
5V RDS(ON) < 120mΩ @ VGS=-4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2301E NCE2301E SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-P...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)