DatasheetsPDF.com

NCE2301

NCE Power Semiconductor
Part Number NCE2301
Manufacturer NCE Power Semiconductor
Description NCE P-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 us...
Datasheet PDF File NCE2301 PDF File

NCE2301
NCE2301

Overview
http://www.
ncepower.
com Pb Free Product NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.
5V RDS(ON) < 110mΩ @ VGS=-4.
5V Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2301 NCE2301 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -20 ±12 -3 -10 1 -55 To 150 125 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Min Typ Max Unit -20 -24 -- -1 V μA Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Parameter Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Cha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)