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NCE40P06J

NCE Power Semiconductor
Part Number NCE40P06J
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P0...
Datasheet PDF File NCE40P06J PDF File

NCE40P06J
NCE40P06J

Overview
http://www.
ncepower.
com Pb Free Product NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .
This device is suitable for use as a load switching application and a wide variety of other applications.
General Features ● VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.
5V RDS(ON) < 45mΩ @ VGS=-4.
5V D G S Schematic diagram ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Application ● PWM applications ● Load switch ● Battery charge in cellular handset Pin assignment DFN2X2-6L bottom view Package marking and ordering information Device Marking 40P06 Device NCE40P06J Device Package DFN2X2-6L Reel Size - Tape Width - Quantity - Absolute maximum ratings (TC=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed (Note 1...


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