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NCE40P06S

NCE Power Semiconductor
Part Number NCE40P06S
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06...
Datasheet PDF File NCE40P06S PDF File

NCE40P06S
NCE40P06S

Overview
http://www.
ncepower.
com Pb Free Product NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-40V,ID =-6A RDS(ON) <45mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 40P06 NCE40P06S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Co...


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