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BCW81

Part Number	BCW81
Manufacturer	NXP
Description	NPN general purpose transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW81 NPN general purpose transistor Product speciﬁcation Sup...
Datasheet	BCW81 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW81 NPN general purpose transistor Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 02 Philips Semiconductors Product speciﬁcation NPN general purpose transistor FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and high gain amplification.
DESCRIPTION NPN transistor in a SOT23 plastic package.
1 handbook, halfpage BCW81 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BCW81 MARKING CODE K3p Top view 1 2 MAM255 2 Fig.
1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 420 100 MIN.
MAX.
50 45 200 250 800 − MHz V V mA mW UNIT 1997 Apr 02 2 Philips Semiconductors Product speciﬁcation NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = 2 mA open collector − − − − − − − −65 − −65 MIN.
BCW81 MAX.
50 45 5 100 200 200 250 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE VCEsat VBEsat VBE Cc fT F PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation volt...

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