DatasheetsPDF.com

BCX68

Siemens Semiconductor Group
Part Number BCX68
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Transistors (For general AF applications High collector current)
Published Mar 23, 2005
Detailed Description NPN Silicon AF Transistors q q q q q BCX 68 For general AF applications High collector current High current gain Low c...
Datasheet PDF File BCX68 PDF File

BCX68
BCX68

Overview
NPN Silicon AF Transistors q q q q q BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (PNP) Type BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking – CB CC CD Ordering Code (tape and reel) Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 20 25 5 1 2 100 200 1 150 – 65 … + 150 Unit V A mA W ˚C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 BCX 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT – 100 – MHz VCEsat VBE – – 0.
6 – – 1 V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 – – IEB0 hFE 50 85 85 100 160 60 – – – 100 160 250 – – – 375 160 250 375 – 0.
5 V – – – – 100 100 10 nA µA µA Values typ.
max.
Unit 20 25 5 – – – – – – V – 1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2 BCX 68 Total power dissipation...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)