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CEF840N

CET
Part Number CEF840N
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEP840N/CEB840N CEF840N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP840N CEB840N VDSS 500V 50...
Datasheet PDF File CEF840N PDF File

CEF840N
CEF840N

Overview
CEP840N/CEB840N CEF840N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP840N CEB840N VDSS 500V 500V CEF840N 500V RDS(ON) 0.
85Ω 0.
85Ω 0.
85Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±30 ID 8 8 e IDM f 32 32 e 125 40 PD 1.
0 0.
32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
0 62.
5 3.
1 65 Units V V A A W W/ C C Units C/W C/W ...


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