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CEF840G

CET
Part Number CEF840G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840G CEB840...
Datasheet PDF File CEF840G PDF File

CEF840G
CEF840G

Overview
CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840G CEB840G VDSS 500V 500V CEF840G 500V RDS(ON) 0.
85Ω 0.
85Ω 0.
85Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±30 ID 8 8 e IDM f 32 32 e 125 40 PD 1.
0 0.
32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
0 62.
5 3.
1 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2007.
Nov.
http://www.
cet-mos.
com CEP840G/CEB840G CEF840G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 4.
8A Forward Transconductance Dynamic Characteristics c gFS VDS = 50V, ID = 4.
8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 25...


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