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BC817

AUK corp
Part Number BC817
Manufacturer AUK corp
Description NPN Silicon Transistor
Published Mar 23, 2005
Detailed Description Semiconductor BC817 NPN Silicon Transistor Descriptions • High current application • Switching application Features •...
Datasheet PDF File BC817 PDF File

BC817
BC817

Overview
Semiconductor BC817 NPN Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807 Ordering Information Type NO.
BC817 Marking NA : hFE rank Package Code SOT-23 Outline Dimensions 2.
4±0.
1 1.
30±0.
1 unit : mm 1 1.
90 Typ.
3 2 0.
4 Typ.
0.
45~0.
60 0.
2 Min.
2.
9±0.
1 1.
12 Max.
0~0.
1 KST-2003-000 0.
124 PIN Connections 1.
Base 2.
Emitter 3.
Collector 0.
38 -0.
03 +0.
05 1 BC817 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 35 5 800 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=1mA, IE=0 VCE=1V, IC=300mA IC=500mA, IB=50mA VCB=25V, IE=0 VCE=1V, IC=100mA VCB=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min.
Typ.
Max.
35 100 100 16 1.
2 700 100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 KST-2003-000 2 BC817 Electrical Characteristic Curves Fig.
1 PC - Ta Fig.
2 IC - VBE 2SC5344SF Fig.
3 IC - VCE Fig.
4 VCE(sat) - IC Fig.
5 hFE - IC KST-2003-000 3 ...


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