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BC857

Part Number	BC857
Manufacturer	AUK corp
Description	PNP Silicon Transistor
Published	Mar 23, 2005
Detailed Description	Semiconductor BC857 PNP Silicon Transistor Descriptions • General purpose application • Switching application Feature...
Datasheet	BC857 PDF File

Overview

Semiconductor BC857 PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847 Ordering Information Type NO.
BC857 Marking UA : hFE rank Package Code SOT-23 Outline Dimensions 2.
4±0.
1 1.
30±0.
1 unit : mm 1 1.
90 Typ.
3 2 0.
4 Typ.
0.
45~0.
60 0.
2 Min.
1.
12 Max.
0.
38 -0.
03 +0.
05 2.
9±0.
1 PIN Connections 1.
Base 2.
Emitter 3.
Collector 0~0.
1 KST-2010-000 0.
124 1 BC857 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -45 -5 -100 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base -Emitter turn on voltage Base -Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure (Ta=25°C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF Test Condition IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE= 0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ Min.
Typ.
Max.
-45 110 -900 150 -700 -650 -15 800 4.
5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2010-000 2 BC857 Electrical Characteristic Curves Fig.
1 PC-Ta Fig.
2 IC-VBE Fig.
3 IC-VCE Fig.
4 hFE-IC Fig.
5 VCE(sat)-IC KST-2010-000 3 ...

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