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2N5463

ETC
Part Number 2N5463
Manufacturer ETC
Description P-channel FET
Published Jul 14, 2018
Detailed Description 2N5460 (SILICON) thru 2N5465 P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in gen...
Datasheet PDF File 2N5463 PDF File

2N5463
2N5463

Overview
2N5460 (SILICON) thru 2N5465 P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in general-purpose amplifier applications.
MAXIMUM RATINGS Rating 2N5460 2N5463 2N5461 2N5464 Symbol 2N5462 2N5465 Unit Drain-Gate Voltage VDG 40 60 Vdc Reverse Gate-Source Voltage VGS(r) 40 60 Vdc Forward Gate Current IG(f) 10 mAdc CASE 29 e (TO-92l 1 1 3 STYLE 7· PIN 1 SOURCE 1 DRAIN 3.
GATE Total Device Dissipation @ TA = 25·C PDI'} 310 mW Derate above 25°C Storage Temperature Range Operating Junction Temperature Range T III stg T III J 2.
82 -65 to +150 -65 to +135 mW/"C ·C ·C (1) Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows.
Po = 1.
0 W @ T C '" 25°C, Derate above 2SoC - 8.
0 mW/oC, T J == -65 to + 150°C.
0JC == 12S o C/W.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwISe noted) I ICharacteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage - -(IG =10 /lAdc,...


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