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2N5146

ETC
Part Number 2N5146
Manufacturer ETC
Description PNP SILICON ANNULAR MULTIPLE TRANSISTORS
Published Jul 14, 2018
Detailed Description 2N5146 (SILICON) PNP SILICON ANNULAR MULTIPLE TRANSISTORS · .. designed for use in high current, high speed switching a...
Datasheet PDF File 2N5146 PDF File

2N5146
2N5146


Overview
2N5146 (SILICON) PNP SILICON ANNULAR MULTIPLE TRANSISTORS · .
.
designed for use in high current, high speed switching applications.
• Low Coliector·l;mitter Saturation Voltage VCE(sat) = 1.
0 Vdc (Max) @ IC = 1.
0 Adc • DC Current Gain Specified - 20 (Min) @IC = 1.
0 Adc • High Current·Gain-Bandwidth Product - fT= 150 MHz (Min)@lc= 50 mAdc • Fast Turn·On Time ton = 40 ns, toff = 110 ns PNPSILICON MULTIPLE TRANSISTORS *MAXIMUM RATINGS Rating Collector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Power Dissipation @ TA'" 2SoC Derate above 2SoC Total Power Dissipation@TC= 25°C Derate above 2SoC ·Indicates JEDEC Registered Data.
Symbol VeEO VeB VEB Ie TJ,T"Q Value 40 40 5.
0 1.
5 -65 to +200 Unit Vdc Vdc Vdc Adc °e All Di.
OneDie Equal Power Po 400 2.
28 600 3.
42 mW mW/oe Po 0.
9 6.
13 3.
6 20.
5 Watts mW/oe STYLE I PIN I COLLECTOR 2 BASE 3 EMITTER 4 NOT CONNECTED 5 EMITTER 6 8ASE 7 C...



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