DatasheetsPDF.com

2N5161

Part Number	2N5161
Manufacturer	ETC
Description	PNP silicon RF power transistors
Published	Jul 14, 2018
Detailed Description	2N5161 (SILICON) 2N5162 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon...
Datasheet	2N5161 PDF File

Overview

2N5161 (SILICON) 2N5162 STYLE 1: PIN 1.
EMITTER 2.
BASE 3.
COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment.
Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD TJ , Tstg 2NS161 2NS162 40 60 4.
0 1.
5 5.
0 20 0.
114 50 0.
286 -65 to +200 Unit Vdc Vdc Vdc Adc Watts W;OC °c FIGURE 1 - 175 MHz TEST CIRCUITS...

Similar Datasheet

2N5100 (2N5xxx) High Voltage Silicon Low and Medium Power Transistors - Semiconductor Technology
2N5101 (2N5xxx) High Voltage Silicon Low and Medium Power Transistors - Semiconductor Technology
2N5102 RF Power Devices - RCA Solid State
2N5103 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5104 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5105 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR - Advanced Semiconductor
2N5108 HIGH FREQUENCY TRANSISTOR - Motorola
2N5108 Silicon NPN Power Transistor - INCHANGE
2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)