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2SD524

Part Number	2SD524
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current ...
Datasheet	2SD524 PDF File

Overview

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min.
) (V CE=3V, I C=5A) • Low Saturation Voltage : VCE (sat)=l- 5v dc=5A) • Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VcBO VCEO VEBO IB ?C L stg RATING 80 80 UNIT V 15 0.
2 100 150 -65^150 -COLLECTOR L BASE 2.
EMITTER COLLECTOR (CASE) JEDEC TO EIAJ TB — 3 TOSHIBA 21 A 1 A Mounting Kit No.
AC73 Weight : 12.
9g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter ...

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