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2SB678

Part Number	2SB678
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) 2SB678 LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPE...
Datasheet	2SB678 PDF File

Overview

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) 2SB678 LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.
PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm gfe.
3 9 MAX.
45j2fe.
MAX.
FEATURES : • High DC Current Gain hFE ( 2 )=1000(Min.
) (V CE=-2V, I C=-1A) Low Saturation Voltage : VCE (sat)=-1.
5V(Max.
) (I C=-1A) Complementary to 2SD688.
jZfo.
45 05.
08 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Ta = 25°C) (Tc = 25°C) Junction Temperature Storage Temperature Range EQ...

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