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BC858

Part Number	BC858
Manufacturer	Fairchild Semiconductor
Description	PNP EPITAXIAL SILICON TRANSISTOR
Published	Mar 23, 2005
Detailed Description	BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Am...
Datasheet	BC858 PDF File

Overview

BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 .
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BC850 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO Emitter-Base Voltage IC Collector Current (DC) PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Collector Cut-off Current VCB= -30V, IE=0 DC Current Gain VCE= -5V, IC= -2mA Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.
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