DatasheetsPDF.com

BT131-600

WeEn
Part Number BT131-600
Manufacturer WeEn
Description 4Q Triac
Published Jul 26, 2018
Detailed Description BT131-600 4Q Triac Rev.01 - 28 April 2018 Product data sheet 1. General description Planar passivated very sensitive g...
Datasheet PDF File BT131-600 PDF File

BT131-600
BT131-600

Overview
BT131-600 4Q Triac Rev.
01 - 28 April 2018 Product data sheet 1.
General description Planar passivated very sensitive gate four quadrant triac in a TO-92 plastic package intended for interfacing with low power drivers including microcontrollers.
2.
Features and benefits • High blocking voltage capability • Very sensitive gate • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits and microcontrollers 3.
Applications • General purpose motor control • General purpose switching • Air conditioner indoor fan control 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Conditions full sine wave; Tlead ≤ 51 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G+; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 1.
4 A; Tj = 25 °C; Fig.
10 Values Unit 600 V 1A 12.
5 A 13.
7 A 125 Min Typ °C Max Unit - 0.
4 3 mA - 1.
3 3 mA - 1.
4 3 mA - 3.
8 7 mA - 1.
3 5 mA - 1.
2 1 V WeEn Semiconductors BT131-600 4Q Triac Symbol Parameter Dynamic characteristics dVD/dt rate of rise of off-state voltage dVcom/dt rate of change of commutating voltage Conditions VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; RGT1(ext) = 1 kΩ; Fig.
12 VD = 400 V; Tj = 125 °C; dIcom/dt = 0.
5 A/ms; IT = 1 A; gate open circuit Min Typ Max Unit 10 20 - V/μs 2 - - V/μs 5.
Pin...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)