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BT131-600E

WeEn
Part Number BT131-600E
Manufacturer WeEn
Description 4Q Triac
Published Jul 26, 2018
Detailed Description BT131-600E 4Q Triac Rev.02 - 12 December 2019 Product data sheet 1. General description Planar passivated sensitive ga...
Datasheet PDF File BT131-600E PDF File

BT131-600E
BT131-600E

Overview
BT131-600E 4Q Triac Rev.
02 - 12 December 2019 Product data sheet 1.
General description Planar passivated sensitive gate four quadrant triac in a TO92 plastic package.
This sensitive gate "series E" triac is intended for interfacing with low power drivers including microcontrollers.
2.
Features and benefits • Direct interfacing to logic level ICs • Direct interfacing with low power gate drivers and microcontrollers • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate in four quadrants • Triggering in all four quadrants 3.
Applications • Air conditioner indoor fan control • General purpose low power motor control • General purpose switching and phase control 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Absolute maximum rating Conditions VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak onstate current Tj junction temperature Static characteristics full sine wave; Tlead ≤ 51 °C; Fig.
1; Fig.
2; Fig.
3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 600 V - - 1 A - - 12.
5 A - - 13.
7 A - - 125 °C - - 10 mA - - 10 mA - - 10 mA WeEn Semiconductors BT131-600E 4Q Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dVcom/dt rate of change of commutating voltage Conditions VD = 12 V; IT = 0.
1 A; T2- G+; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 1.
4 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; RGT1(ext) = 1 kΩ VD = 400 V; Tj = 125 °C; dIcom/dt = 0.
5 A/ms; IT = 1 A; gate open circuit Min Typ Max Unit - - 10 ...


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