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BCF29

Diotec Semiconductor
Part Number BCF29
Manufacturer Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Published Mar 23, 2005
Detailed Description BCF 29, BFC 30 PNP www.DataSheet4U.com General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si...
Datasheet PDF File BCF29 PDF File

BCF29
BCF29

Overview
BCF 29, BFC 30 PNP www.
DataSheet4U.
com General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 250 mW SOT-23 (TO-236) 0.
01 g 2.
9 ±0.
1 0.
4 3 1.
1 Plastic case Kunststoffgehäuse 1.
3 ±0.
1 Type Code 1 2 2.
5 max Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.
9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min.
Typ.
– – – 80 mV 150 mV Max.
100 nA 10 :A 100 nA 300 mV – Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 100/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 10 mA, - IB = 0.
5 mA - IC = 100 mA, - IB = 5 mA - IEB0 2 - ICB0 - ICB0 – – – – – Collector saturation volt.
– Kollektor-Sättigungsspg.
) - VCEsat - VCEsat 1 ) Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 18 01.
11.
2003 General Purpose Transistors Characteristics (Tj = 25/C) www.
DataSheet4U.
com BCF 29, BCF 30 Kennwerte (Tj = 25/C) Min.
- VBEsat - VBEsat BCF 29 BCF 30 BCF 29 BCF 30 hFE hFE hFE hFE VBEon fT CCB0 – – –...


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