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ITCH20160B2


Part Number ITCH20160B2
Manufacturer Innogration
Title High Power RF LDMOS FET
Description The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with fr...
Features
 High Efficiency and Linear Gain Operations
 Integrated ESD Protection
 Internally Matched for Ease of Use
 Excellent thermal stability, low HCI drift
 Large Positiv...

File Size 882.30KB
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ITCH20160B2E : The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20160B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 18.3 51.7 52.9 52.6 55.0 1842.5 MHz 18.3 51.8 52.7 52.7 55.5 1880 MHz 18.2 51.4 51.7 52.4 55.3 ITCH20160B2E Features  High Efficiency and Linear Gain Operations  .




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