DatasheetsPDF.com

ITCH20160B2E

Innogration
Part Number ITCH20160B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High...
Datasheet PDF File ITCH20160B2E PDF File

ITCH20160B2E
ITCH20160B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH20160B2 Preliminary Datasheet V1.
0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20160B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 18.
3 51.
7 52.
9 52.
6 55.
0 1842.
5 MHz 18.
3 51.
8 52.
7 52.
7 55.
5 1880 MHz 18.
2 51.
4 51.
7 52.
4 55.
3 ITCH20160B2E Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Excellent thermal stability, low HCI drift  Large Positiv...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)