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BCP51-10

Infineon Technologies AG
Part Number BCP51-10
Manufacturer Infineon Technologies AG
Description PNP Silicon AF Transistors
Published Mar 23, 2005
Detailed Description www.DataSheet4U.com BCP51...BCP53 PNP Silicon AF Transistors  For AF driver and output stages  High collector curren...
Datasheet PDF File BCP51-10 PDF File

BCP51-10
BCP51-10

Overview
www.
DataSheet4U.
com BCP51.
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BCP53 PNP Silicon AF Transistors  For AF driver and output stages  High collector current  Low collector-emitter saturation voltage  Complementary types: BCP54.
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BCP56 (NPN) 4 3 2 1 VPS05163 Type BCP51 BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP53-10 BCP53-16 Marking BCP 51 1=B BCP 51-10 1 = B BCP 51-16 1 = B BCP 52 1=B BCP 52-10 1 = B BCP 52-16 1 = B BCP 53 1=B BCP 53-10 1 = B BCP 53-16 1 = B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 1 Nov-29-2001 BCP51.
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BCP53 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE  1k Collector-base voltage Emitter-base voltage Symbol VCEO VCER VCBO VEBO BCP51 45 45 45 5 BCP52 60 60 60 5 BCP53 80 100 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.
5 100 200 1.
5 150 -65 .
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150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP51.
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BCP53 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ.
max.
Unit V 45 60 80 100 20 nA µA - BCP51 BCP52 BCP53 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO BCP51 BCP52 BCP53 45 60 100 V(BR)EBO ICBO ICBO hFE hFE Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V 5 25 BCP51.
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53 hFE-grp.
10 hFE-grp.
16 40 63 100 hFE VCEsat VBE(ON) 100 160 - 250 160 250 0.
5 1 V ...


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