DatasheetsPDF.com

BCP51-16

Infineon Technologies AG
Part Number BCP51-16
Manufacturer Infineon Technologies AG
Description PNP Silicon AF Transistors
Published Mar 23, 2005
Detailed Description PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation...
Datasheet PDF File BCP51-16 PDF File

BCP51-16
BCP51-16


Overview
PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 .
.
.
BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCP51.
.
.
-BCP53.
.
.
Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16 Marking Pin Configuration * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * Marking is the same as type-name Package SOT223 SOT223 SOT223 SOT223 SOT223 1 2011-10-13 BCP51.
.
.
-BCP53.
.
.
Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53 Symbol VCEO Value 45 60 80 Collector-base voltage BCP51 BCP52 BCP53 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO 5 IC 1 ICM 1.
5 IB 100 IBM 200 Ptot 2 Junction temperature Tj 150 Storage temperature Tstg -65 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51.
.
.
-BCP53.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP53 V(BR)CEO 45 - 60 - 80 - V - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCP51 IC = 100 µA, IE = 0 , BCP52 IC = 100 µA, IE = 0 , BCP53 V(BR)CBO 45 - - 60 - - 100 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 30 V, IE = 0 - - 0.
1 VCB = 30 V, IE = 0 , TA = 150 °C - - 20 DC current gain1) hFE - IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCP51 40 - 250 IC = 150 mA, VC...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)