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PDS0976

Potens semiconductor
Part Number PDS0976
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 100V N-Channel MOSFETs PDS0976 General Description These N-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDS0976 PDF File

PDS0976
PDS0976

Overview
100V N-Channel MOSFETs PDS0976 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration DD D D G SSSG D S BVDSS 100V RDSON 9.
2m ID 12A Features  100V,12A, RDS(ON) =9.
2mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications  Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) (Chip Limitation) Drain Current – Continuous (TC=100℃) (Chip Li...


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