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HY1804

HOOYI
Part Number HY1804
Manufacturer HOOYI
Description N-Channel MOSFET
Published Aug 19, 2018
Detailed Description HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-So...
Datasheet PDF File HY1804 PDF File

HY1804
HY1804

Overview
HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.
3mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V Rating 40 ±20 175 -55 to 175 80 320** 80 54 62.
5 31.
2 2.
4 110 340*** Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W °C/W mJ Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th)...


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