DatasheetsPDF.com

HY1808P

HOOYI
Part Number HY1808P
Manufacturer HOOYI
Description N-Channel MOSFET
Published Mar 24, 2015
Detailed Description HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reli...
Datasheet PDF File HY1808P PDF File

HY1808P
HY1808P

Overview
HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.
) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications • Power Management for Inverter Systems.
G Ordering and Marking Information S N-Channel MOSFET P HY1808 ÿYYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.
hooyi-semi.
com HY1808P Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings EAS Avalanche Energy, Single Pulsed Note *VD=50V TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.
3mH Rating 75 ±25 175 -55 to 175 85 360 85 68 300 185 0.
5 62.
5 1.
1* Unit V °C °C A A A W °C/W J Electrical Characteristics (T A = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics BVDSS ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)