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60N323

Toshiba
Part Number 60N323
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 3, 2018
Detailed Description GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching...
Datasheet PDF File 60N323 PDF File

60N323
60N323

Overview
GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm • diode included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.
19 μs (typ.
) (IC = 60 A) diode : trr = 0.
35 μs (max.
) (di/dt = −200 A/μs) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1 ms Diode forward current DC 1 ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IF IFP PC Tj Tstg ⎯ 1050 ±25 60 120 25 50 190 150 −55~150 0.
8 V V A A W °C °C N･m JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.
75 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability signif...


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