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60N321

Toshiba Semiconductor
Part Number 60N321
Manufacturer Toshiba Semiconductor
Description GT60N321
Published Sep 15, 2015
Detailed Description GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fo...
Datasheet PDF File 60N321 PDF File

60N321
60N321

Overview
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.
25 μs (typ.
) (IC = 60 A) FRD : trr = 0.
8 μs (typ.
) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 2.
3 V (typ.
) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1 ms Emitter-Collector Forward Current DC 1 ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IECF ...


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