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FDT86246L

Fairchild Semiconductor
Part Number FDT86246L
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Sep 7, 2018
Detailed Description FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Feat...
Datasheet PDF File FDT86246L PDF File

FDT86246L
FDT86246L

Overview
FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A „ Max rDS(on) = 280 mΩ at VGS = 4.
5 V, ID = 1.
8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications „ Load Switch „ Primary Switch „ Buck/Boost Switch D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power...


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