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PD55035-E

STMicroelectronics
Part Number PD55035-E
Manufacturer STMicroelectronics
Description RF POWER transistor
Published Sep 20, 2018
Detailed Description PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ ...
Datasheet PDF File PD55035-E PDF File

PD55035-E
PD55035-E

Overview
PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.
9dB gain @ 500 MHz / 12.
5 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF.
Device’s superio...


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