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2SJ293

Hitachi
Part Number 2SJ293
Manufacturer Hitachi
Description Silicon P-Channel MOSFET
Published Sep 26, 2018
Detailed Description 2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SJ293 PDF File

2SJ293
2SJ293

Overview
2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 12 3 1.
Gate G 2.
Drain 3.
Source S November 1996 2SJ293 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ² 10 µs, duty cycle ² 1% 2.
Value at TC = 25°C 3.
Value at Tch = 25°C, Rg ³ 50 ½ Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings –60 ±20 –15 –60 –15 –15 19 30 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SJ293 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)D...


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