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180N10B

ON Semiconductor
Part Number 180N10B
Manufacturer ON Semiconductor
Description Power MOSFET
Published Oct 13, 2018
Detailed Description NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed...
Datasheet PDF File 180N10B PDF File

180N10B
180N10B

Overview
NDPL180N10B Power MOSFET 100V, 3.
0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Test  Pb-Free and RoHS compliance Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDL IDP PD Tj 100 V 20 V 180 A 100 A 600 A 2.
1 200 W 175 C Storage Temperature Tstg 55 to +175 C Source Current (Body Diode) Avalanche Energy (Single Pulse) (Note 2) IS EAS 100 A 451 mJ Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL 260 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and...


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