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180N10

IXYS
Part Number 180N10
Manufacturer IXYS
Description Power MOSFETs
Published Oct 13, 2018
Detailed Description HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ...
Datasheet PDF File 180N10 PDF File

180N10
180N10

Overview
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Maximum Ratings 100 V 100 V ±20 V ±30 V 165 A 76 A 720 A 180 A 60 mJ 3J 5 V/ns 400 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 5 W °C °C °C °C V~ g Test Conditions V = 0 V, I = 3mA GS D VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS V =0V GS VGS = 10 V, ID = 90A Note 1 Characteristic Values (TJ = 25...


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