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2N2958

Part Number	2N2958
Manufacturer	Motorola
Description	NPN Transistor
Published	Nov 6, 2018
Detailed Description	2N2958 (SILICON) 2N2959 2N3115 2N3116 NPN silicon annular Star transistors for high- speed "switching and amplifier appl...
Datasheet	2N2958 PDF File

Overview

2N2958 (SILICON) 2N2959 2N3115 2N3116 NPN silicon annular Star transistors for high- speed "switching and amplifier applications.
CASE 22 (TO·18) 2N2958 2N2959 2N3115 2N3116 Collector connected to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation 25°C Case Temperature Derate above 25°C Total Device Dissipation 25°C Ambient Temperature Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol ~~~;~~ (TO·S) VCB 60 2N311S 2N3ll6 (TO·1S) 60 Unit Vdc VCEO 20 20 Vdc VEB 5.
0 5.
0 Vdc IC 600 600 mAdc PD 3.
0 1.
8 watts 20 12 mW/oC PD 0.
6 0.
4 watts 4.
00 2.
67 mW/OC TJ -65 to +175 °c Tstg -65 to +200 °c 2-391 2N2958, 2N2959, 2N3115, 2N3116 (Continued) ELECTRICAL CHARACTERISTICS(TA =25°C unless otherwise noted.
Characteristic Symbol Collector Cutoff Current (VCS = 50 Vdc, IE = 0) (VCS = 50 Vdc, IE = 0, TA = 150oC) Collector Cutoff Current (VCE = 30 Vdc, VSE ...

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