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2N657

Part Number	2N657
Manufacturer	Motorola
Description	NPN Transistor
Published	Nov 14, 2018
Detailed Description	2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplif...
Datasheet	2N657 PDF File

Overview

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS .
NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
• High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 • High Emitter-Base Breakdown Voltage - BVEBO = 8.
0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC Derate above 2SoC Total Device Dissipation @ Teo:: 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB PD PD TJ,Tstg 2N656 2N657 60 100 60 100 8.
0 1.
0 5.
7...

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