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HM2301F

H&M Semiconductor
Part Number HM2301F
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2301F P-Channel Enhancement Mode Power MOSFET Description The HM2301F uses advanced trench technology to provide exce...
Datasheet PDF File HM2301F PDF File

HM2301F
HM2301F

Overview
HM2301F P-Channel Enhancement Mode Power MOSFET Description The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -20V,ID = -2.
8A RDS(ON) < 150mΩ @ VGS=-2.
5V RDS(ON) < 110mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch D G S Schematic diagram A1SHB Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A1SHB HM2301F SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Oper...


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